Identification of the Chemical Bonding Prompting Adhesion of a-C:H Thin Films on Ferrous Alloy Intermediated by a SiCx:H Buffer Layer.

Amorphous carbon (a-C) and several related materials (DLCs) may have ultralow friction coefficients that can be used for saving-energy applications. However, poor chemical bonding of a-C/DLC films on metallic alloys is expected, due to the stability of carbon-carbon bonds. Silicon-based intermediate layers are employed to enhance the adherence of a-C:H films on ferrous alloys, although the role of such buffer layers is not yet fully understood in chemical terms. The chemical bonding of a-C:H thin films on ferrous alloy intermediated by a nanometric SiCx:H buffer layer was analyzed by X-ray photoelectron spectroscopy (XPS). The chemical profile was inspected by glow discharge optical emission spectroscopy (GDOES), and the chemical structure was evaluated by Raman and Fourier transform infrared spectroscopy techniques. The nature of adhesion is discussed by analyzing the chemical bonding at the interfaces of the a-C:H/SiCx:H/ferrous alloy sandwich structure. The adhesion phenomenon is ascribed to specifically chemical bonding character at the buffer layer. Whereas carbon-carbon (C-C) and carbon-silicon (C-Si) bonds are formed at the outermost interface, the innermost interface is constituted mainly by silicon-iron (Si-Fe) bonds. The oxygen presence degrades the adhesion up to totally delaminate the a-C:H thin films. The SiCx:H deposition temperature determines the type of chemical bonding and the amount of oxygen contained in the buffer layer.

Characterization of films of weak polyelectrolytes incorporated with poly(vinyl-pyrrolidone)-stabilized gold nanoparticles.

The incorporation process of gold nanoparticles (Au NPs) into self-assembled films was obtained using the layer-by-layer (LbL) technique where two weak polyelectrolytes, i.e., poly(allylamine hydrochloride) (PAH) as polycation and poly(acrylic acid) (PAA) as polyanion, were sequentially adsorbed. To evaluate this process, the films of PAH and PAA were immersed in gold solutions containing different sizes of Au NPs (6 nm and 10 nm) stabilized with poly(vinyl-pyrrolidone) (PVP) before and after treatment with a 0.1 mol L(-1) solution of hydrochloric acid. The systems were analyzed using a multi-method approach involving UV-Visible spectroscopy (UV-Vis), X-ray diffraction (XRD), atomic force (AFM) and transmission electron microscopy (TEM). The results showed that the self-assembled polyelectrolyte films that were not treated by acid showed greater incorporation and better distribution of Au NPs.

Limiting step involved in the thermal growth of silicon oxide films on silicon carbide.

Thermal growth of silicon oxide films on silicon carbide in O2 was investigated using oxygen isotopic substitution and narrow resonance nuclear reaction profiling. This investigation was carried out in parallel with the thermal growth of silicon oxide films on Si. Results demonstrate that the limiting steps of the thermal oxide growth are different in these two semiconductors, being diffusion limited in the case of Si and reaction limited in the case of SiC. This fact renders the growth kinetics of SiO2 on SiC very sensitive to the reactivity of the interface region, whose compositional and structural changes can affect the electrical properties of the structure.